Vishay SiHG052N60EF Type N-Channel MOSFET, 48 A, 600 V Enhancement, 3-Pin TO-247 SIHG052N60EF-GE3
- RS Stock No.:
- 204-7207
- Mfr. Part No.:
- SIHG052N60EF-GE3
- Brand:
- Vishay
Bulk discount available
Subtotal (1 pack of 5 units)*
Kr.410 81
(exc. VAT)
Kr.513 51
(inc. VAT)
FREE delivery for online orders over 500,00 kr
Temporarily out of stock
- Shipping from 11. mai 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 5 | Kr. 82,162 | Kr. 410,81 |
| 10 - 20 | Kr. 73,948 | Kr. 369,74 |
| 25 - 45 | Kr. 69,852 | Kr. 349,26 |
| 50 - 120 | Kr. 65,734 | Kr. 328,67 |
| 125 + | Kr. 60,792 | Kr. 303,96 |
*price indicative
- RS Stock No.:
- 204-7207
- Mfr. Part No.:
- SIHG052N60EF-GE3
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 48A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Series | SiHG052N60EF | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 52mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 278W | |
| Typical Gate Charge Qg @ Vgs | 101nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Width | 5.31 mm | |
| Height | 20.7mm | |
| Length | 15.87mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 48A | ||
Maximum Drain Source Voltage Vds 600V | ||
Series SiHG052N60EF | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 52mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 278W | ||
Typical Gate Charge Qg @ Vgs 101nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Width 5.31 mm | ||
Height 20.7mm | ||
Length 15.87mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Vishay EF Series Power MOSFET With Fast Body Diode has a 4th generation E series technology. It has reduced switching and conduction losses.
Low figure-of-merit (FOM) Ron x Qg
Low effective capacitance (Co(er)
Related links
- Vishay SiHG052N60EF N-Channel MOSFET 600 V, 3-Pin TO-247AC SIHG052N60EF-GE3
- Vishay SiHP052N60EF N-Channel MOSFET 600 V, 3-Pin TO-220AB SIHP052N60EF-GE3
- Vishay N-Channel MOSFET 600 V, 3-Pin TO-247AC SIHG039N60EF-GE3
- Vishay N-Channel MOSFET 600 V, 3-Pin TO-247AC SIHG22N60EF-GE3
- Vishay E Series N-Channel MOSFET 600 V, 3-Pin TO-247AC SiHG30N60E-GE3
- Vishay Silicon N-Channel MOSFET 600 V, 3-Pin TO-247AC SIHG155N60EF-GE3
- Vishay EF N-Channel MOSFET 600 V, 3-Pin TO-247AC SiHG186N60EF-GE3
- Vishay E Series N-Channel MOSFET 600 V, 3-Pin TO-247AC SIHG47N60E-GE3