Vishay SiHP068N60EF Type N-Channel MOSFET, 41 A, 600 V Enhancement, 3-Pin TO-220
- RS Stock No.:
- 204-7255
- Mfr. Part No.:
- SIHP068N60EF-GE3
- Brand:
- Vishay
Currently unavailable
We don't know if this item will be back in stock, RS intend to remove it from our range soon.
- RS Stock No.:
- 204-7255
- Mfr. Part No.:
- SIHP068N60EF-GE3
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 41A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Series | SiHP068N60EF | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 68mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 51nC | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Forward Voltage Vf | 1.2V | |
| Maximum Power Dissipation Pd | 250W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 27.69mm | |
| Width | 9.96 mm | |
| Height | 4.24mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 41A | ||
Maximum Drain Source Voltage Vds 600V | ||
Series SiHP068N60EF | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 68mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 51nC | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Forward Voltage Vf 1.2V | ||
Maximum Power Dissipation Pd 250W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 27.69mm | ||
Width 9.96 mm | ||
Height 4.24mm | ||
Automotive Standard No | ||
The Vishay EF Series Power MOSFET With Fast Body Diode has a 4th generation E series technology. It has reduced switching and conduction losses.
Avalanche energy rated (UIS)
Low figure-of-merit (FOM) Ron x Qg
Related links
- Vishay SiHP068N60EF N-Channel MOSFET 600 V, 3-Pin TO-220AB SIHP068N60EF-GE3
- Vishay SiHB068N60EF N-Channel MOSFET 600 V, 3-Pin D2PAK SIHB068N60EF-GE3
- Vishay N-Channel MOSFET 100 V, 3-Pin TO-247AC IRFP150PBF
- Microchip N-Channel MOSFET 3300 V TO-247 MSC080SMA330B4
- Infineon N-Channel MOSFET 60 V PG-TDSON IAUC41N06S5L100ATMA1
- onsemi NVTFS5C471NL N-Channel MOSFET 40 V, 8-Pin WDFN NVTFS5C471NLWFTAG
- Infineon N-Channel MOSFET 700 V, 4-Pin PG-VSON-4 IPL65R230C7AUMA1
- Infineon IMB SiC N-Channel MOSFET 650 V, 7-Pin PG-TO263-7 IMBG65R050M2HXTMA1
