Vishay SiHB068N60EF Type N-Channel MOSFET, 41 A, 600 V Enhancement, 3-Pin TO-263

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Subtotal (1 reel of 3000 units)*

Kr.89 928 00 

(exc. VAT)

Kr.112 410 00 

(inc. VAT)

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Units
Per unit
Per Reel*
3000 +Kr. 29,976Kr. 89 928,00

*price indicative

RS Stock No.:
204-7243
Mfr. Part No.:
SIHB068N60EF-GE3
Brand:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

41A

Maximum Drain Source Voltage Vds

600V

Series

SiHB068N60EF

Package Type

TO-263

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

68mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

30 V

Typical Gate Charge Qg @ Vgs

51nC

Forward Voltage Vf

1.2V

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

250W

Maximum Operating Temperature

150°C

Length

14.61mm

Standards/Approvals

No

Height

4.06mm

Width

9.65 mm

Automotive Standard

No

The Vishay EF Series Power MOSFET With Fast Body Diode has a 4th generation E series technology. It has reduced switching and conduction losses.

Avalanche energy rated (UIS)

Low figure-of-merit (FOM) Ron x Qg

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