Vishay EF Type N-Channel MOSFET, 8.4 A, 600 V Enhancement, 3-Pin TO-263

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Subtotal (1 tube of 50 units)*

Kr.679 80 

(exc. VAT)

Kr.849 75 

(inc. VAT)

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  • Final 150 unit(s), ready to ship
Units
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Per Tube*
50 +Kr. 13,596Kr. 679,80

*price indicative

RS Stock No.:
210-4973
Mfr. Part No.:
SiHB186N60EF-GE3
Brand:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

8.4A

Maximum Drain Source Voltage Vds

600V

Package Type

TO-263

Series

EF

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

168mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

21nC

Forward Voltage Vf

1.2V

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

30 V

Maximum Power Dissipation Pd

156W

Maximum Operating Temperature

150°C

Length

14.61mm

Height

4.06mm

Standards/Approvals

No

Width

9.65 mm

Automotive Standard

No

The Vishay EF Series Power MOSFET With Fast Body Diode has D2PAK (TO-263) package type.

4th generation E series technology

Low figure-of-merit (FOM) Ron x Qg

Low effective capacitance (Co(er))

Reduced switching and conduction losses

Avalanche energy rated (UIS)

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