Vishay EF Type N-Channel Single MOSFETs, 21 A, 600 V Enhancement, 3-Pin TO-263
- RS Stock No.:
- 653-176
- Mfr. Part No.:
- SIHB155N60EF-GE3
- Brand:
- Vishay
Bulk discount available
Subtotal (1 unit)*
Kr.32 15
(exc. VAT)
Kr.40 19
(inc. VAT)
FREE delivery for online orders over 500,00 kr
In Stock
- Plus 1 000 unit(s) shipping from 19. januar 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 1 - 9 | Kr. 32,15 |
| 10 + | Kr. 31,12 |
*price indicative
- RS Stock No.:
- 653-176
- Mfr. Part No.:
- SIHB155N60EF-GE3
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | Single MOSFETs | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 21A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | TO-263 | |
| Series | EF | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.159Ω | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 179W | |
| Maximum Gate Source Voltage Vgs | ±30 V | |
| Typical Gate Charge Qg @ Vgs | 25nC | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Length | 2.79mm | |
| Width | 9.65 mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type Single MOSFETs | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 21A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type TO-263 | ||
Series EF | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.159Ω | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 179W | ||
Maximum Gate Source Voltage Vgs ±30 V | ||
Typical Gate Charge Qg @ Vgs 25nC | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Length 2.79mm | ||
Width 9.65 mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Vishay 4th generation E Series Power MOSFET featuring a fast body diode for enhanced switching performance. It offers a low figure of merit (FOM), reduced effective capacitance, and optimized thermal behaviour. Designed for server, telecom, SMPS, and power factor correction supplies, it delivers reliable efficiency in demanding power applications.
Pb Free
Halogen free
RoHS compliant
Related links
- Vishay EF Type N-Channel Single MOSFETs 600 V Enhancement, 3-Pin TO-263 SIHB155N60EF-GE3
- Vishay EF Type N-Channel Single MOSFETs 800 V Enhancement, 3-Pin TO-247AC
- Vishay EF Type N-Channel Single MOSFETs 800 V Enhancement, 3-Pin TO-220AB
- Vishay EF Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-263
- Vishay EF Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-263
- Vishay EF Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-263 SiHB186N60EF-GE3
- Vishay EF Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-247
- Vishay EF Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-220