Vishay EF Type N-Channel Single MOSFETs, 21 A, 600 V Enhancement, 3-Pin TO-263 SIHB155N60EF-GE3
- RS Stock No.:
- 653-175
- Mfr. Part No.:
- SIHB155N60EF-GE3
- Brand:
- Vishay
Bulk discount available
Subtotal (1 tube of 50 units)*
Kr.1 436 65
(exc. VAT)
Kr.1 795 80
(inc. VAT)
FREE delivery for online orders over 500,00 kr
In Stock
- 1 000 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 50 - 200 | Kr. 28,733 | Kr. 1 436,65 |
| 250 + | Kr. 28,158 | Kr. 1 407,90 |
*price indicative
- RS Stock No.:
- 653-175
- Mfr. Part No.:
- SIHB155N60EF-GE3
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | Single MOSFETs | |
| Maximum Continuous Drain Current Id | 21A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | TO-263 | |
| Series | EF | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.159Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | ±30 V | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 25nC | |
| Maximum Power Dissipation Pd | 179W | |
| Maximum Operating Temperature | 150°C | |
| Length | 2.79mm | |
| Standards/Approvals | No | |
| Width | 9.65 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type Single MOSFETs | ||
Maximum Continuous Drain Current Id 21A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type TO-263 | ||
Series EF | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.159Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs ±30 V | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 25nC | ||
Maximum Power Dissipation Pd 179W | ||
Maximum Operating Temperature 150°C | ||
Length 2.79mm | ||
Standards/Approvals No | ||
Width 9.65 mm | ||
Automotive Standard No | ||
The Vishay 4th generation E Series Power MOSFET featuring a fast body diode for enhanced switching performance. It offers a low figure of merit (FOM), reduced effective capacitance, and optimized thermal behaviour. Designed for server, telecom, SMPS, and power factor correction supplies, it delivers reliable efficiency in demanding power applications.
Pb Free
Halogen free
RoHS compliant
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