Vishay EF Type N-Channel MOSFET, 8.4 A, 600 V Enhancement, 3-Pin TO-220 SiHA186N60EF-GE3

Subtotal (1 pack of 5 units)*

Kr.81 27 

(exc. VAT)

Kr.101 59 

(inc. VAT)

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Per Pack*
5 +Kr. 16,254Kr. 81,27

*price indicative

Packaging Options:
RS Stock No.:
210-4963
Mfr. Part No.:
SiHA186N60EF-GE3
Brand:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

8.4A

Maximum Drain Source Voltage Vds

600V

Package Type

TO-220

Series

EF

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

168mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.2V

Maximum Power Dissipation Pd

33W

Maximum Gate Source Voltage Vgs

30 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

21nC

Maximum Operating Temperature

150°C

Width

9.7 mm

Standards/Approvals

No

Height

4.3mm

Length

28.1mm

Automotive Standard

No

The Vishay EF Series Power MOSFET With Fast Body Diode has Thin-Lead TO-220 FULLPAK package type.

4th generation E series technology

Low figure-of-merit (FOM) Ron x Qg

Low effective capacitance (Co(er))

Reduced switching and conduction losses

Avalanche energy rated (UIS)

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