Vishay SiHFBC30AS Type N-Channel MOSFET, 3.6 A, 600 V Enhancement, 3-Pin TO-263 SIHFBC30AS-GE3

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Subtotal (1 pack of 10 units)*

Kr.181 78 

(exc. VAT)

Kr.227 22 

(inc. VAT)

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Units
Per unit
Per Pack*
10 - 90Kr. 18,178Kr. 181,78
100 - 240Kr. 17,091Kr. 170,91
250 - 490Kr. 15,455Kr. 154,55
500 - 990Kr. 14,552Kr. 145,52
1000 +Kr. 13,648Kr. 136,48

*price indicative

Packaging Options:
RS Stock No.:
815-2698
Mfr. Part No.:
SIHFBC30AS-GE3
Brand:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

3.6A

Maximum Drain Source Voltage Vds

600V

Package Type

TO-263

Series

SiHFBC30AS

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

2.2Ω

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

74W

Maximum Gate Source Voltage Vgs

30 V

Typical Gate Charge Qg @ Vgs

23nC

Forward Voltage Vf

1.6V

Maximum Operating Temperature

150°C

Width

9.65 mm

Length

10.67mm

Height

4.83mm

Standards/Approvals

No

Automotive Standard

No

COO (Country of Origin):
CN

N-Channel MOSFET, 600V to 1000V, Vishay Semiconductor


MOSFET Transistors, Vishay Semiconductor


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