Vishay SiHFBC30AS Type N-Channel MOSFET, 3.6 A, 600 V Enhancement, 3-Pin TO-263
- RS Stock No.:
- 165-6093
- Mfr. Part No.:
- SIHFBC30AS-GE3
- Brand:
- Vishay
Bulk discount available
Subtotal (1 tube of 50 units)*
Kr.488 25
(exc. VAT)
Kr.610 30
(inc. VAT)
FREE delivery for online orders over 500,00 kr
Temporarily out of stock
- Shipping from 09. april 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 50 - 50 | Kr. 9,765 | Kr. 488,25 |
| 100 - 200 | Kr. 9,179 | Kr. 458,95 |
| 250 - 450 | Kr. 8,301 | Kr. 415,05 |
| 500 - 1200 | Kr. 7,811 | Kr. 390,55 |
| 1250 + | Kr. 7,324 | Kr. 366,20 |
*price indicative
- RS Stock No.:
- 165-6093
- Mfr. Part No.:
- SIHFBC30AS-GE3
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 3.6A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | TO-263 | |
| Series | SiHFBC30AS | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 2.2Ω | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 74W | |
| Typical Gate Charge Qg @ Vgs | 23nC | |
| Forward Voltage Vf | 1.6V | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Width | 9.65 mm | |
| Length | 10.67mm | |
| Height | 4.83mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 3.6A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type TO-263 | ||
Series SiHFBC30AS | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 2.2Ω | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 74W | ||
Typical Gate Charge Qg @ Vgs 23nC | ||
Forward Voltage Vf 1.6V | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Width 9.65 mm | ||
Length 10.67mm | ||
Height 4.83mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
N-Channel MOSFET, 600V to 1000V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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