STMicroelectronics STO67N60DM6 N-Channel MOSFET, 33 A, 600 V Enhancement, 3-Pin TO-220 STO67N60DM6
- RS Stock No.:
- 206-8631
- Mfr. Part No.:
- STO67N60DM6
- Brand:
- STMicroelectronics
Currently unavailable
We don't know if this item will be back in stock, RS intend to remove it from our range soon.
- RS Stock No.:
- 206-8631
- Mfr. Part No.:
- STO67N60DM6
- Brand:
- STMicroelectronics
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 33A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | TO-220 | |
| Series | STO67N60DM6 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 59mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 72.5nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 150W | |
| Maximum Gate Source Voltage Vgs | 25V | |
| Forward Voltage Vf | 1.6V | |
| Maximum Operating Temperature | 150°C | |
| Height | 2.2mm | |
| Length | 11.48mm | |
| Standards/Approvals | No | |
| Width | 9.8mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 33A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type TO-220 | ||
Series STO67N60DM6 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 59mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 72.5nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 150W | ||
Maximum Gate Source Voltage Vgs 25V | ||
Forward Voltage Vf 1.6V | ||
Maximum Operating Temperature 150°C | ||
Height 2.2mm | ||
Length 11.48mm | ||
Standards/Approvals No | ||
Width 9.8mm | ||
Automotive Standard No | ||
The STMicroelectronics high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fast recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching behaviours available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters.
Fast-recovery body diode
Lower RDS(on) per area vs previous generation
Low gate charge, input capacitance and resistance
100% avalanche tested
Extremely high dv/dt ruggedness
Zener-protected
Excellent switching performance thanks to the extra driving source pin
Related links
- STMicroelectronics STO67N60DM6 N-Channel MOSFET 600 V Enhancement, 3-Pin TO-220
- onsemi SUPERFET V N-Channel MOSFET 600 V Enhancement, 3-Pin TO-247 NTHL099N60S5
- Vishay EF N-Channel MOSFET 600 V Enhancement, 3-Pin TO-247 SiHG33N60EF-GE3
- ROHM R60 Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-3PF R6086YNZC17
- onsemi SUPERFET V N-Channel MOSFET 600 V Enhancement, 3-Pin TO-247
- Vishay EF Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-247 SIHG33N60EF-GE3
- Infineon IPL60R N-Channel MOSFET 600 V Enhancement, 5-Pin ThinPAK IPL60R075CFD7AUMA1
- Infineon IPL60R N-Channel MOSFET 600 V Enhancement, 5-Pin ThinPAK