Vishay EF Type N-Channel MOSFET, 33 A, 600 V Enhancement, 3-Pin TO-247 SiHG33N60EF-GE3

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Subtotal (1 unit)*

Kr.58 39 

(exc. VAT)

Kr.72 99 

(inc. VAT)

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1 - 9Kr. 58,39
10 - 24Kr. 55,00
25 - 49Kr. 49,51
50 - 99Kr. 46,65
100 +Kr. 43,85

*price indicative

Packaging Options:
RS Stock No.:
903-4484
Mfr. Part No.:
SiHG33N60EF-GE3
Brand:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

33A

Maximum Drain Source Voltage Vds

600V

Package Type

TO-247

Series

EF

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

98mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

30 V

Maximum Power Dissipation Pd

278W

Typical Gate Charge Qg @ Vgs

103nC

Forward Voltage Vf

1.2V

Maximum Operating Temperature

150°C

Standards/Approvals

No

Length

15.87mm

Width

5.31 mm

Height

20.82mm

Automotive Standard

No

COO (Country of Origin):
CN

N-Channel MOSFET with Fast Diode, EF Series, Vishay Semiconductor


Reduced Reverse Recovery Time, Reverse Recovery Charge, and Reverse Recovery Current

Low figure-of-merit (FOM)

Low input capacitance (Ciss)

Increased robustness due to low Reverse Recovery Charge

Ultra low gate charge (Qg)

MOSFET Transistors, Vishay Semiconductor


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