Toshiba TK090N65Z Type N-Channel MOSFET, 30 A, 650 V Enhancement, 3-Pin TO-247 TK090N65Z,S1F(S

Subtotal (1 tube of 30 units)*

Kr.1 889 10 

(exc. VAT)

Kr.2 361 30 

(inc. VAT)

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Units
Per unit
Per Tube*
30 +Kr. 62,97Kr. 1 889,10

*price indicative

RS Stock No.:
206-9725
Mfr. Part No.:
TK090N65Z,S1F(S
Brand:
Toshiba
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Brand

Toshiba

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

30A

Maximum Drain Source Voltage Vds

650V

Series

TK090N65Z

Package Type

TO-247

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

90mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

47nC

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

230W

Maximum Gate Source Voltage Vgs

30 V

Forward Voltage Vf

-1.7V

Maximum Operating Temperature

150°C

Standards/Approvals

No

Length

40.02mm

Height

5.02mm

Width

15.94 mm

Automotive Standard

No

The Toshiba silicon N-channel MOSFET having high-speed switching properties with lower capacitance. It is mainly used in switching power supplies.

Low drain-source on-resistance 0.075 ?

Storage temperature -55 to 150°C

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