Vishay SiR826LDP Type N-Channel MOSFET, 86 A, 80 V Enhancement, 8-Pin SO-8 SiR826LDP-T1-RE3

View all MOSFETs
Bulk discount available

Subtotal (1 pack of 10 units)*

Kr.147 00 

(exc. VAT)

Kr.183 80 

(inc. VAT)

Add to Basket
Select or type quantity
Being discontinued
  • Final 5 970 unit(s), ready to ship
Units
Per unit
Per Pack*
10 - 90Kr. 14,70Kr. 147,00
100 - 240Kr. 13,98Kr. 139,80
250 - 490Kr. 12,504Kr. 125,04
500 - 990Kr. 11,76Kr. 117,60
1000 +Kr. 11,04Kr. 110,40

*price indicative

Packaging Options:
RS Stock No.:
210-5005
Mfr. Part No.:
SiR826LDP-T1-RE3
Brand:
Vishay
Find similar products by selecting one or more attributes.
Select all

Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

86A

Maximum Drain Source Voltage Vds

80V

Package Type

SO-8

Series

SiR826LDP

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

4.15mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.1V

Typical Gate Charge Qg @ Vgs

90nC

Maximum Power Dissipation Pd

83W

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

150°C

Standards/Approvals

No

Length

6.25mm

Width

5.26 mm

Height

1.12mm

Automotive Standard

No

The Vishay N-Channel 80 V (D-S) MOSFET has PowerPAK SO-8 package type with 86 A drain current.

TrenchFET Gen IV power MOSFET

Very low RDS - Qg figure-of-merit (FOM)

Tuned for the lowest RDS - Qoss FOM

100 % Rg and UIS tested

Related links