STMicroelectronics SCT1000N170 N-Channel MOSFET, 7 A, 1.7 kV Enhancement, 3-Pin Hip-247 SCT1000N170
- RS Stock No.:
- 212-2092
- Mfr. Part No.:
- SCT1000N170
- Brand:
- STMicroelectronics
Bulk discount available
View bulk pricing optionsSubtotal (1 unit)*
Kr. 111,20
(exc. VAT)
Kr. 139,00
(inc. VAT)
FREE delivery for online orders over 750,00 kr
Temporarily out of stock
- 30 unit(s) shipping from 14 October 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 1 - 9 | Kr. 111,20 |
| 10 - 99 | Kr. 109,82 |
| 100 + | Kr. 108,45 |
*price indicative
- RS Stock No.:
- 212-2092
- Mfr. Part No.:
- SCT1000N170
- Brand:
- STMicroelectronics
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 7A | |
| Maximum Drain Source Voltage Vds | 1.7kV | |
| Series | SCT1000N170 | |
| Package Type | Hip-247 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1.66Ω | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 96W | |
| Maximum Gate Source Voltage Vgs | 22V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 13.3nC | |
| Forward Voltage Vf | 4.5V | |
| Maximum Operating Temperature | 200°C | |
| Standards/Approvals | No | |
| Width | 20.15mm | |
| Height | 5.15mm | |
| Length | 15.75mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 7A | ||
Maximum Drain Source Voltage Vds 1.7kV | ||
Series SCT1000N170 | ||
Package Type Hip-247 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1.66Ω | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 96W | ||
Maximum Gate Source Voltage Vgs 22V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 13.3nC | ||
Forward Voltage Vf 4.5V | ||
Maximum Operating Temperature 200°C | ||
Standards/Approvals No | ||
Width 20.15mm | ||
Height 5.15mm | ||
Length 15.75mm | ||
Automotive Standard No | ||
SiC MOSFET
The STMicroelectronics silicon carbide power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature. The outstanding thermal properties of the SiC material, combined with the device’s housing in the proprietary HiP247 package, allows designers to use an industry standard outline with significantly improved thermal capability.
High speed switching performance
Very fast and robust intrinsic body diode
Low capacitances
Related links
- STMicroelectronics SCT1000N170 N-Channel MOSFET 1.7 kV Enhancement, 3-Pin Hip-247 SCT1000N170
- STMicroelectronics SCTW40N N-Channel MOSFET 1.2 kV Enhancement, 3-Pin Hip-247 SCTW40N120G2V
- STMicroelectronics SCTW70N N-Channel MOSFET 1.2 kV Enhancement, 3-Pin Hip-247 SCTW70N120G2V
- STMicroelectronics SCT N-Channel MOSFET 1.2 kV Enhancement, 3-Pin Hip-247 SCTW60N120G2
- STMicroelectronics N-Channel MOSFET 1200 V Enhancement, 3-Pin Hip-247
- STMicroelectronics SCTW35 N-Channel MOSFET 650 V Enhancement, 3-Pin Hip-247
- STMicroelectronics Sct N-Channel Power MOSFET 900 V Enhancement, 3-Pin HIP-247-3 SCT012W90G3AG
- STMicroelectronics N-Channel MOSFET 1200 V Enhancement, 3-Pin Hip-247 SCT30N120