STMicroelectronics SCTW35 N-Channel MOSFET, 45 A, 650 V Enhancement, 3-Pin Hip-247
- RS Stock No.:
- 201-0859
- Mfr. Part No.:
- SCTW35N65G2V
- Brand:
- STMicroelectronics
Subtotal (1 tube of 30 units)*
Kr. 4 388,28
(exc. VAT)
Kr. 5 485,35
(inc. VAT)
FREE delivery for online orders over 750,00 kr
Last RS stock
- Final 840 unit(s), ready to ship
Units | Per unit | Per Tube* |
|---|---|---|
| 30 + | Kr. 146,276 | Kr. 4 388,28 |
*price indicative
- RS Stock No.:
- 201-0859
- Mfr. Part No.:
- SCTW35N65G2V
- Brand:
- STMicroelectronics
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 45A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | Hip-247 | |
| Series | SCTW35 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 45mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 240W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 73nC | |
| Maximum Gate Source Voltage Vgs | 22V | |
| Maximum Operating Temperature | 200°C | |
| Width | 5.15mm | |
| Standards/Approvals | No | |
| Length | 14.8mm | |
| Height | 15.75mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 45A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type Hip-247 | ||
Series SCTW35 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 45mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 240W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 73nC | ||
Maximum Gate Source Voltage Vgs 22V | ||
Maximum Operating Temperature 200°C | ||
Width 5.15mm | ||
Standards/Approvals No | ||
Length 14.8mm | ||
Height 15.75mm | ||
Automotive Standard No | ||
The STMicroelectronics 650V silicon carbide power MOSFET has a current rating of 45A and drain to source resistance 45m Ohm. It has low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature.
Very fast and robust intrinsic body diode
Low capacitance
Related links
- STMicroelectronics SCTW35 N-Channel MOSFET 650 V Enhancement, 3-Pin Hip-247 SCTW35N65G2V
- STMicroelectronics SCTWA35N65G2V-4 N-Channel MOSFET 650 V Enhancement, 4-Pin Hip-247 SCTWA35N65G2V-4
- STMicroelectronics SCT N-Channel MOSFET 650 V Depletion, 3-Pin Hip-247 SCTW35N65G2VAG
- STMicroelectronics N-Channel MOSFET 1200 V Enhancement, 3-Pin Hip-247
- STMicroelectronics N-Channel MOSFET 1200 V Enhancement, 3-Pin Hip-247 SCT30N120
- STMicroelectronics SCTW90 N-Channel MOSFET 650 V Enhancement, 3-Pin Hip-247 SCTW90N65G2V
- STMicroelectronics SiC MOSFET N-Channel 650 V Enhancement, 3-Pin Hip-247 SCT018W65G3AG
- STMicroelectronics SCT N-Channel Power MOSFET 650 V Enhancement, 3-Pin HIP-247-3 SCT018W65G3AG
