STMicroelectronics SCTW35 Type N-Channel MOSFET, 45 A, 650 V Enhancement, 3-Pin Hip-247

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Subtotal (1 tube of 30 units)*

Kr.4 388 28 

(exc. VAT)

Kr.5 485 35 

(inc. VAT)

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Units
Per unit
Per Tube*
30 +Kr. 146,276Kr. 4 388,28

*price indicative

RS Stock No.:
201-0859
Mfr. Part No.:
SCTW35N65G2V
Brand:
STMicroelectronics
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Brand

STMicroelectronics

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

45A

Maximum Drain Source Voltage Vds

650V

Series

SCTW35

Package Type

Hip-247

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

45mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

73nC

Maximum Power Dissipation Pd

240W

Maximum Gate Source Voltage Vgs

22 V

Maximum Operating Temperature

200°C

Length

14.8mm

Standards/Approvals

No

Height

15.75mm

Width

5.15 mm

Automotive Standard

No

The STMicroelectronics 650V silicon carbide power MOSFET has a current rating of 45A and drain to source resistance 45m Ohm. It has low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature.

Very fast and robust intrinsic body diode

Low capacitance

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