STMicroelectronics SCTW35 Type N-Channel MOSFET, 45 A, 650 V Enhancement, 3-Pin Hip-247 SCTW35N65G2V
- RS Stock No.:
- 201-0860
- Mfr. Part No.:
- SCTW35N65G2V
- Brand:
- STMicroelectronics
Bulk discount available
Subtotal (1 unit)*
Kr.155 58
(exc. VAT)
Kr.194 48
(inc. VAT)
FREE delivery for online orders over 500,00 kr
In Stock
- Plus 847 unit(s) shipping from 26. desember 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 1 - 4 | Kr. 155,58 |
| 5 - 9 | Kr. 151,24 |
| 10 - 24 | Kr. 147,35 |
| 25 - 49 | Kr. 143,57 |
| 50 + | Kr. 140,03 |
*price indicative
- RS Stock No.:
- 201-0860
- Mfr. Part No.:
- SCTW35N65G2V
- Brand:
- STMicroelectronics
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 45A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | Hip-247 | |
| Series | SCTW35 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 45mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 240W | |
| Maximum Gate Source Voltage Vgs | 22 V | |
| Typical Gate Charge Qg @ Vgs | 73nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 200°C | |
| Standards/Approvals | No | |
| Height | 15.75mm | |
| Length | 14.8mm | |
| Width | 5.15 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 45A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type Hip-247 | ||
Series SCTW35 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 45mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 240W | ||
Maximum Gate Source Voltage Vgs 22 V | ||
Typical Gate Charge Qg @ Vgs 73nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 200°C | ||
Standards/Approvals No | ||
Height 15.75mm | ||
Length 14.8mm | ||
Width 5.15 mm | ||
Automotive Standard No | ||
The STMicroelectronics 650V silicon carbide power MOSFET has a current rating of 45A and drain to source resistance 45m Ohm. It has low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature.
Very fast and robust intrinsic body diode
Low capacitance
Related links
- STMicroelectronics SCTW35 SiC N-Channel MOSFET 650 V, 3-Pin HiP247 SCTW35N65G2V
- STMicroelectronics SCT SiC N-Channel MOSFET Module 650 V Depletion, 3-Pin HiP247 SCTW35N65G2VAG
- STMicroelectronics SCT SiC N-Channel MOSFET Module 1200 V Depletion, 3-Pin HiP247 SCTWA30N120
- STMicroelectronics SCTWA35N65G2V SiC N-Channel SiC Power Module 650 V, 3-Pin HiP247 SCTWA35N65G2V
- STMicroelectronics Silicon N-Channel MOSFET 650 V, 4-Pin HiP247-4 SCTWA35N65G2V-4
- STMicroelectronics SCTWA40N120G2V-4 SiC N-Channel MOSFET 1200 V, 4-Pin HiP247-4 SCTWA40N120G2V-4
- STMicroelectronics SCTH35 SiC N-Channel MOSFET 650 V, 7-Pin H2PAK-7 SCTH35N65G2V-7
- STMicroelectronics N-Channel MOSFET 1200 V, 3-Pin HiP247 SCT30N120
