STMicroelectronics SCTW35 Type N-Channel MOSFET, 45 A, 650 V Enhancement, 3-Pin Hip-247 SCTW35N65G2V
- RS Stock No.:
- 201-0860
- Mfr. Part No.:
- SCTW35N65G2V
- Brand:
- STMicroelectronics
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Subtotal (1 unit)*
Kr.155 58
(exc. VAT)
Kr.194 48
(inc. VAT)
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In Stock
- Plus 847 unit(s) shipping from 19. januar 2026
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Units | Per unit |
|---|---|
| 1 - 4 | Kr. 155,58 |
| 5 - 9 | Kr. 151,24 |
| 10 - 24 | Kr. 147,35 |
| 25 - 49 | Kr. 143,57 |
| 50 + | Kr. 140,03 |
*price indicative
- RS Stock No.:
- 201-0860
- Mfr. Part No.:
- SCTW35N65G2V
- Brand:
- STMicroelectronics
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 45A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | Hip-247 | |
| Series | SCTW35 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 45mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 22 V | |
| Maximum Power Dissipation Pd | 240W | |
| Typical Gate Charge Qg @ Vgs | 73nC | |
| Maximum Operating Temperature | 200°C | |
| Height | 15.75mm | |
| Standards/Approvals | No | |
| Width | 5.15 mm | |
| Length | 14.8mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 45A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type Hip-247 | ||
Series SCTW35 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 45mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 22 V | ||
Maximum Power Dissipation Pd 240W | ||
Typical Gate Charge Qg @ Vgs 73nC | ||
Maximum Operating Temperature 200°C | ||
Height 15.75mm | ||
Standards/Approvals No | ||
Width 5.15 mm | ||
Length 14.8mm | ||
Automotive Standard No | ||
The STMicroelectronics 650V silicon carbide power MOSFET has a current rating of 45A and drain to source resistance 45m Ohm. It has low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature.
Very fast and robust intrinsic body diode
Low capacitance
Related links
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