STMicroelectronics SCTW35 Type N-Channel MOSFET, 45 A, 650 V Enhancement, 3-Pin Hip-247 SCTW35N65G2V

Bulk discount available

Subtotal (1 unit)*

Kr.155 58 

(exc. VAT)

Kr.194 48 

(inc. VAT)

Add to Basket
Select or type quantity
In Stock
  • Plus 847 unit(s) shipping from 26. desember 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
1 - 4Kr. 155,58
5 - 9Kr. 151,24
10 - 24Kr. 147,35
25 - 49Kr. 143,57
50 +Kr. 140,03

*price indicative

Packaging Options:
RS Stock No.:
201-0860
Mfr. Part No.:
SCTW35N65G2V
Brand:
STMicroelectronics
Find similar products by selecting one or more attributes.
Select all

Brand

STMicroelectronics

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

45A

Maximum Drain Source Voltage Vds

650V

Package Type

Hip-247

Series

SCTW35

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

45mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

240W

Maximum Gate Source Voltage Vgs

22 V

Typical Gate Charge Qg @ Vgs

73nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

200°C

Standards/Approvals

No

Height

15.75mm

Length

14.8mm

Width

5.15 mm

Automotive Standard

No

The STMicroelectronics 650V silicon carbide power MOSFET has a current rating of 45A and drain to source resistance 45m Ohm. It has low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature.

Very fast and robust intrinsic body diode

Low capacitance

Related links