STMicroelectronics Type N-Channel MOSFET, 45 A, 1200 V Enhancement, 3-Pin Hip-247

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Subtotal (1 tube of 30 units)*

Kr.5 999 82 

(exc. VAT)

Kr.7 499 76 

(inc. VAT)

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  • Final 300 unit(s), ready to ship
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Per Tube*
30 +Kr. 199,994Kr. 5 999,82

*price indicative

RS Stock No.:
168-8966
Mfr. Part No.:
SCT30N120
Brand:
STMicroelectronics
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Brand

STMicroelectronics

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

45A

Maximum Drain Source Voltage Vds

1200V

Package Type

Hip-247

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

100mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

270W

Maximum Gate Source Voltage Vgs

25 V

Typical Gate Charge Qg @ Vgs

105nC

Forward Voltage Vf

3.5V

Maximum Operating Temperature

200°C

Height

20.15mm

Length

15.75mm

Standards/Approvals

No

Width

5.15 mm

Automotive Standard

No

COO (Country of Origin):
CN

N-Channel Silicon Carbide (SiC) MOSFET, STMicroelectronics


Silicon carbide (SiC) MOSFETs feature very low static drain-source on-resistance for the 1200V rating combined with excellent switching performance, translating into more efficient and Compact systems.

MOSFET Transistors, STMicroelectronics


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