STMicroelectronics SCTWA35N65G2V-4 Type N-Channel MOSFET, 45 A, 650 V Enhancement, 4-Pin Hip-247

View all MOSFETs

Subtotal (1 tube of 30 units)*

Kr.4 375 11 

(exc. VAT)

Kr.5 468 88 

(inc. VAT)

Add to Basket
Select or type quantity
In Stock
  • Plus 240 unit(s) shipping from 29. desember 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Tube*
30 +Kr. 145,837Kr. 4 375,11

*price indicative

RS Stock No.:
233-0472
Mfr. Part No.:
SCTWA35N65G2V-4
Brand:
STMicroelectronics
Find similar products by selecting one or more attributes.
Select all

Brand

STMicroelectronics

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

45A

Maximum Drain Source Voltage Vds

650V

Series

SCTWA35N65G2V-4

Package Type

Hip-247

Mount Type

Through Hole

Pin Count

4

Maximum Drain Source Resistance Rds

67mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

240W

Maximum Gate Source Voltage Vgs

22 V

Typical Gate Charge Qg @ Vgs

73nC

Minimum Operating Temperature

-55°C

Forward Voltage Vf

3.3V

Maximum Operating Temperature

200°C

Standards/Approvals

No

Height

5.1mm

Length

20.1mm

Width

21.1 mm

Automotive Standard

No

The STMicroelectronics silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature.

Very fast and robust intrinsic body diode

Low capacitances

Source sensing pin for increased efficiency

Related links