STMicroelectronics SCTWA90N65G2V-4 Type N-Channel MOSFET, 119 A, 650 V Enhancement, 4-Pin Hip-247

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Subtotal (1 tube of 30 units)*

Kr.9 489 24 

(exc. VAT)

Kr.11 861 55 

(inc. VAT)

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Units
Per unit
Per Tube*
30 +Kr. 316,308Kr. 9 489,24

*price indicative

RS Stock No.:
213-3943
Mfr. Part No.:
SCTWA90N65G2V-4
Brand:
STMicroelectronics
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Brand

STMicroelectronics

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

119A

Maximum Drain Source Voltage Vds

650V

Package Type

Hip-247

Series

SCTWA90N65G2V-4

Mount Type

Surface

Pin Count

4

Maximum Drain Source Resistance Rds

24mΩ

Channel Mode

Enhancement

Forward Voltage Vf

2.5V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

157nC

Maximum Power Dissipation Pd

656W

Maximum Gate Source Voltage Vgs

22 V

Maximum Operating Temperature

200°C

Length

15.9mm

Height

5.1mm

Width

21.1 mm

Standards/Approvals

No

Automotive Standard

No

The STMicroelectronics SCTWA90N65G2V-4 silicon carbide Power MOSFET device has been developed using advanced and innovative 2nd generation SiC MOSFET technology, features remarkably low on-resistance per unit area and very good switching performance.

High speed switching performance

Very high operating junction temperature capability

Very fast and robust intrinsic body diode

Extremely low gate charge and input capacitance

Source sensing pin for increased efficiency

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