STMicroelectronics SCTW90 Type N-Channel MOSFET, 119 A, 650 V Enhancement, 3-Pin Hip-247 SCTW90N65G2V

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Subtotal (1 unit)*

Kr.335 88 

(exc. VAT)

Kr.419 85 

(inc. VAT)

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1 - 4Kr. 335,88
5 - 9Kr. 326,73
10 - 24Kr. 318,26
25 - 49Kr. 310,14
50 +Kr. 302,24

*price indicative

Packaging Options:
RS Stock No.:
201-0887
Mfr. Part No.:
SCTW90N65G2V
Brand:
STMicroelectronics
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Brand

STMicroelectronics

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

119A

Maximum Drain Source Voltage Vds

650V

Package Type

Hip-247

Series

SCTW90

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

24mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

565W

Maximum Gate Source Voltage Vgs

18 V

Minimum Operating Temperature

-55°C

Forward Voltage Vf

2.5V

Typical Gate Charge Qg @ Vgs

157nC

Maximum Operating Temperature

200°C

Length

15.75mm

Width

5.15 mm

Height

20.15mm

Standards/Approvals

No

Automotive Standard

No

The STMicroelectronics 650V silicon carbide power MOSFET has a current rating of 119A and drain to source resistance 18m Ohm. It has low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature.

Very high operating junction temperature capability (TJ = 175 °C)

Very fast and robust intrinsic body diode

Extremely low gate charge and input capacitances

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