STMicroelectronics SCTWA70N120G2V-4 Type N-Channel MOSFET, 91 A, 1200 V Enhancement, 4-Pin Hip-247

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Subtotal (1 tube of 30 units)*

Kr.12 878 13 

(exc. VAT)

Kr.16 097 67 

(inc. VAT)

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Per Tube*
30 +Kr. 429,271Kr. 12 878,13

*price indicative

RS Stock No.:
233-0474
Mfr. Part No.:
SCTWA70N120G2V-4
Brand:
STMicroelectronics
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Brand

STMicroelectronics

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

91A

Maximum Drain Source Voltage Vds

1200V

Series

SCTWA70N120G2V-4

Package Type

Hip-247

Mount Type

Through Hole

Pin Count

4

Maximum Drain Source Resistance Rds

30mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

22 V

Maximum Power Dissipation Pd

547W

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

150nC

Forward Voltage Vf

2.7V

Maximum Operating Temperature

200°C

Standards/Approvals

No

Length

34.8mm

Height

5mm

Width

15.6 mm

Automotive Standard

No

The STMicroelectronics silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature.

Very fast and robust intrinsic body diode

Extremely low gate charge and input capacitance

Very high operating junction temperature capability (TJ = 200 °C)

Source sensing pin for increased efficiency

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