STMicroelectronics SCTW70N Type N-Channel MOSFET, 91 A, 1200 V Enhancement, 3-Pin Hip-247

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Subtotal (1 tube of 30 units)*

Kr.11 991 99 

(exc. VAT)

Kr.14 989 98 

(inc. VAT)

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Units
Per unit
Per Tube*
30 +Kr. 399,733Kr. 11 991,99

*price indicative

RS Stock No.:
233-3023
Mfr. Part No.:
SCTW70N120G2V
Brand:
STMicroelectronics
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Brand

STMicroelectronics

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

91A

Maximum Drain Source Voltage Vds

1200V

Series

SCTW70N

Package Type

Hip-247

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

21mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

28nC

Maximum Gate Source Voltage Vgs

22 V

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

547W

Forward Voltage Vf

2.7V

Maximum Operating Temperature

200°C

Standards/Approvals

No

Height

20.15mm

Width

5.15 mm

Length

15.75mm

Automotive Standard

No

The STMicroelectronics silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature. The outstanding thermal properties of the Sic material allow designers to use an industry-standard outline with significantly improved thermal capability. These features render the device perfectly suitable for high-efficiency and high power density applications.

Very high operating junction temperature capability (TJ = 200 °C)

Very fast and robust intrinsic body diode

Extremely low gate charge and input capacitances

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