STMicroelectronics SCT N-Channel MOSFET, 56 A, 1.2 kV Enhancement, 3-Pin Hip-247 SCT025W120G3AG
- RS Stock No.:
- 215-073
- Mfr. Part No.:
- SCT025W120G3AG
- Brand:
- STMicroelectronics
Bulk discount available
View bulk pricing optionsSubtotal (1 unit)*
Kr. 195,40
(exc. VAT)
Kr. 244,25
(inc. VAT)
FREE delivery for online orders over 750,00 kr
In Stock
- 30 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 1 - 9 | Kr. 195,40 |
| 10 - 99 | Kr. 191,28 |
| 100 - 599 | Kr. 188,87 |
| 600 + | Kr. 186,59 |
*price indicative
- RS Stock No.:
- 215-073
- Mfr. Part No.:
- SCT025W120G3AG
- Brand:
- STMicroelectronics
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 56A | |
| Maximum Drain Source Voltage Vds | 1.2kV | |
| Package Type | Hip-247 | |
| Series | SCT | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 27mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 73nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 22V | |
| Maximum Power Dissipation Pd | 388W | |
| Maximum Operating Temperature | 200°C | |
| Width | 15.6mm | |
| Length | 34.8mm | |
| Height | 5mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 56A | ||
Maximum Drain Source Voltage Vds 1.2kV | ||
Package Type Hip-247 | ||
Series SCT | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 27mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 73nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 22V | ||
Maximum Power Dissipation Pd 388W | ||
Maximum Operating Temperature 200°C | ||
Width 15.6mm | ||
Length 34.8mm | ||
Height 5mm | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
The STMicroelectronics Silicon carbide Power MOSFET device has been developed using ST’s Advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.
High speed switching performances
Very fast and robust intrinsic body diode
Related links
- STMicroelectronics SCT N-Channel MOSFET 1200 V Enhancement, 3-Pin Hip-247 SCT025W120G3AG
- STMicroelectronics Sct N-Channel Power MOSFET 1200 V Enhancement, 4-Pin Hip-247-4 SCT025W120G3-4
- STMicroelectronics SCT N-Channel MOSFET 1200 V Enhancement, 3-Pin Hip-247 SCT040W120G3AG
- STMicroelectronics SCT N-Channel MOSFET 1.2 kV Enhancement, 3-Pin Hip-247 SCTW60N120G2
- STMicroelectronics Sct N-Channel Power MOSFET 900 V Enhancement, 3-Pin HIP-247-3 SCT012W90G3AG
- STMicroelectronics SCT N-Channel MOSFET Modules 1200 V Depletion, 3-Pin Hip-247 SCTWA30N120
- STMicroelectronics SCT N-Channel MOSFET 1200 V Depletion, 3-Pin Hip-247 SCT50N120
- STMicroelectronics SCT N-Channel MOSFET 1200 V Depletion, 3-Pin Hip-247 SCTW40N120G2VAG