STMicroelectronics SCT Type N-Channel MOSFET, 56 A, 1200 V Enhancement, 3-Pin Hip-247 SCT025W120G3AG

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Subtotal (1 tube of 30 units)*

Kr.9 314 22 

(exc. VAT)

Kr.11 642 76 

(inc. VAT)

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  • Plus 30 unit(s) shipping from 29. desember 2025
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Units
Per unit
Per Tube*
30 +Kr. 310,474Kr. 9 314,22

*price indicative

RS Stock No.:
215-071
Mfr. Part No.:
SCT025W120G3AG
Brand:
STMicroelectronics
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Brand

STMicroelectronics

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

56A

Maximum Drain Source Voltage Vds

1200V

Series

SCT

Package Type

Hip-247

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

27mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

73nC

Maximum Power Dissipation Pd

388W

Maximum Gate Source Voltage Vgs

22 V

Maximum Operating Temperature

200°C

Length

34.8mm

Width

15.6 mm

Height

5mm

Standards/Approvals

RoHS

Automotive Standard

AEC-Q101

The STMicroelectronics Silicon carbide Power MOSFET device has been developed using ST’s Advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.

High speed switching performances

Very fast and robust intrinsic body diode

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