Infineon OptiMOS 2 Type N-Channel MOSFET, 1.5 A, 20 V Enhancement, 6-Pin SOT-363 BSD214SNH6327XTSA1

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Subtotal (1 pack of 200 units)*

Kr.175 80 

(exc. VAT)

Kr.219 80 

(inc. VAT)

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  • Plus 8 200 unit(s) shipping from 29. desember 2025
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Units
Per unit
Per Pack*
200 +Kr. 0,879Kr. 175,80

*price indicative

Packaging Options:
RS Stock No.:
214-4333
Mfr. Part No.:
BSD214SNH6327XTSA1
Brand:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

1.5A

Maximum Drain Source Voltage Vds

20V

Series

OptiMOS 2

Package Type

SOT-363

Mount Type

Surface

Pin Count

6

Maximum Drain Source Resistance Rds

250mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

12 V

Typical Gate Charge Qg @ Vgs

0.8nC

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.1V

Maximum Power Dissipation Pd

0.5W

Maximum Operating Temperature

150°C

Standards/Approvals

No

Length

2.02mm

Width

1.35 mm

Height

1mm

Automotive Standard

AEC-Q101

The Infineon OptiMOS™2 Small-Signal-Transistor are Qualified according to AEC Q101.

N-channel

Enhancement mode

Super Logic level (2.5V rated)

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