Infineon 600V CoolMOS P7 Type N-Channel MOSFET, 12 A, 600 V Enhancement, 3-Pin TO-263 IPB60R280P7ATMA1

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Subtotal (1 pack of 10 units)*

Kr.194 07 

(exc. VAT)

Kr.242 59 

(inc. VAT)

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Per Pack*
10 - 40Kr. 19,407Kr. 194,07
50 - 90Kr. 18,441Kr. 184,41
100 - 240Kr. 17,663Kr. 176,63
250 - 490Kr. 16,885Kr. 168,85
500 +Kr. 15,719Kr. 157,19

*price indicative

Packaging Options:
RS Stock No.:
214-4370
Mfr. Part No.:
IPB60R280P7ATMA1
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

12A

Maximum Drain Source Voltage Vds

600V

Series

600V CoolMOS P7

Package Type

TO-263

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

280mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

0.9V

Typical Gate Charge Qg @ Vgs

18nC

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

53W

Maximum Operating Temperature

150°C

Standards/Approvals

No

Height

4.5mm

Length

10.02mm

Width

9.27 mm

Automotive Standard

No

The Infineon 600V Cool MOS P7 super junction MOSFET continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class RonxA and the inherently low gate charge (QG) of the Cool MOS 7th generation platform ensure its high efficiency.

It has rugged body diode

Integrated RG reduces MOSFET oscillation sensitivity

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