Infineon 600V CoolMOS P7 N-Channel MOSFET, 12 A, 600 V Enhancement, 3-Pin TO-252 IPD60R280P7SAUMA1

RS Stock No.:: 218-3050
Mfr. Part No.:: IPD60R280P7SAUMA1
Brand:: Infineon

Infineon 600V CoolMOS P7 N-Channel MOSFET, 12 A, 600 V Enhancement, 3-Pin TO-252 IPD60R280P7SAUMA1

Subtotal (2500 units, on reels of 2500)*

Kr. 12 357,50

(exc. VAT)

Kr. 15 447,50

(inc. VAT)

FREE delivery for online orders over 750,00 kr

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Shipping from 23 December 2026

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Units	Per unit	Per Reel*
2500 +	Kr. 4,943	Kr. 12 357,50

*price indicative

RS Stock No.:: 218-3050
Mfr. Part No.:: IPD60R280P7SAUMA1
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	12A
	Maximum Drain Source Voltage Vds	600V
	Package Type	TO-252
	Series	600V CoolMOS P7
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	280mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	18nC
	Maximum Power Dissipation Pd	53W
	Forward Voltage Vf	0.9V
	Maximum Gate Source Voltage Vgs	20V
	Minimum Operating Temperature	-40°C
	Maximum Operating Temperature	150°C
	Standards/Approvals	No
	Width	6.22mm
	Height	2.41mm
	Length	6.73mm
	Automotive Standard	No

	Select all
	Brand Infineon
	Channel Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 12A
	Maximum Drain Source Voltage Vds 600V
	Package Type TO-252
	Series 600V CoolMOS P7
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 280mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 18nC
	Maximum Power Dissipation Pd 53W
	Forward Voltage Vf 0.9V
	Maximum Gate Source Voltage Vgs 20V
	Minimum Operating Temperature -40°C
	Maximum Operating Temperature 150°C
	Standards/Approvals No
	Width 6.22mm
	Height 2.41mm
	Length 6.73mm
	Automotive Standard No

Datasheet - IPD60R280P7SAUMA1

Infineon 600V CoolMOS P7 Series MOSFET, 600V Maximum Drain Source Voltage, 12A Maximum Continuous Drain Current - IPD60R280P7SAUMA1

This MOSFET is a high-voltage N-channel switching device designed for surface-mount power applications where robust voltage handling and elevated operating temperatures are required. It functions as an enhancement-mode transistor suitable for switching and power conversion tasks, offering controlled gate-driven conduction and support for continuous drain currents typical in industrial and power-electronics environments.

Features and Benefits:

• 600 V maximum drain-source voltage enables high-voltage switching
• 12 A continuous drain current supports significant load currents
• 280 mΩ maximum RDS(on) reduces conduction losses under load
• 53 W maximum power dissipation maintains thermal margin in operation
• 18 nC typical gate charge at VGS permits fast switching transitions
• −40 °C to 150 °C operating range allows high-temperature deployment

Applications

• Suitable for high-voltage power supplies and converters
• Ideal for switch-mode power supply primary switches
• Used with motor drives requiring 600 V rated devices
• Can be used for industrial power-switching modules
• Suitable for Compact surface-mount power assemblies

What gate voltage limits must be observed for safe operation?

The device must not exceed a gate-source voltage of 20 V to avoid gate overstress.

How does the package format affect mounting and the thermal path?

The TO-252 surface-mount package provides a Compact footprint and a direct thermal path through the tab for PCB heat-sinking arrangements.

What type of conduction mode does it employ and what does that imply?

It operates in enhancement mode as an N-channel device, so it requires a positive gate drive relative to the source to turn on.

What is the typical gate-charge behaviour relevant for drive design?

The typical gate charge of 18 nC at VGS indicates the gate driver must supply that charge per switching event, influencing driver sizing and switching losses.