Infineon 600V CoolMOS P7 Type N-Channel MOSFET, 12 A, 600 V Enhancement, 3-Pin TO-252

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Subtotal (1 reel of 2500 units)*

Kr.10 592 50 

(exc. VAT)

Kr.13 240 00 

(inc. VAT)

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Units
Per unit
Per Reel*
2500 +Kr. 4,237Kr. 10 592,50

*price indicative

RS Stock No.:
218-3050
Mfr. Part No.:
IPD60R280P7SAUMA1
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

12A

Maximum Drain Source Voltage Vds

600V

Series

600V CoolMOS P7

Package Type

TO-252

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

280mΩ

Channel Mode

Enhancement

Forward Voltage Vf

0.9V

Typical Gate Charge Qg @ Vgs

18nC

Maximum Power Dissipation Pd

53W

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-40°C

Maximum Operating Temperature

150°C

Standards/Approvals

No

Length

6.73mm

Width

6.22 mm

Height

2.41mm

Automotive Standard

No

The Infineon 600V CoolMOS™ P7 series N-channel power MOSFET. It has extremely low switching and conduction losses which makes switching applications even more efficient, more compact and much cooler.

Significant reduction of switching and conduction losses

Suitable for hard and soft switching

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