Infineon 600V CoolMOS P7 Type N-Channel MOSFET, 18 A, 600 V Enhancement, 3-Pin TO-252 IPD60R180P7SAUMA1

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Subtotal (1 pack of 10 units)*

Kr.56 91 

(exc. VAT)

Kr.71 14 

(inc. VAT)

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10 +Kr. 5,691Kr. 56,91

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Packaging Options:
RS Stock No.:
214-4386
Mfr. Part No.:
IPD60R180P7SAUMA1
Brand:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

18A

Maximum Drain Source Voltage Vds

600V

Package Type

TO-252

Series

600V CoolMOS P7

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

180mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-40°C

Typical Gate Charge Qg @ Vgs

25nC

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

72W

Forward Voltage Vf

0.9V

Maximum Operating Temperature

150°C

Standards/Approvals

No

Height

2.35mm

Width

6.42 mm

Length

6.65mm

Automotive Standard

No

The 600V Cool MOS P7 super junction MOSFET continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class RonxA and the inherently low gate charge (QG) of the Cool MOS™ 7th generation platform ensure its high efficiency.

It has rugged body diode

Integrated RG reduces MOSFET oscillation sensitivity

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