Infineon 600V CoolMOS P7 Type N-Channel MOSFET, 18 A, 600 V Enhancement, 3-Pin TO-220 IPP60R180P7XKSA1

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Subtotal (1 pack of 10 units)*

Kr.147 05 

(exc. VAT)

Kr.183 81 

(inc. VAT)

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Units
Per unit
Per Pack*
10 - 10Kr. 14,705Kr. 147,05
20 - 40Kr. 13,968Kr. 139,68
50 - 90Kr. 13,385Kr. 133,85
100 - 240Kr. 12,79Kr. 127,90
250 +Kr. 11,909Kr. 119,09

*price indicative

Packaging Options:
RS Stock No.:
214-4416
Mfr. Part No.:
IPP60R180P7XKSA1
Brand:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

18A

Maximum Drain Source Voltage Vds

600V

Package Type

TO-220

Series

600V CoolMOS P7

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

180mΩ

Channel Mode

Enhancement

Forward Voltage Vf

0.9V

Typical Gate Charge Qg @ Vgs

25nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

72W

Maximum Operating Temperature

150°C

Height

4.4mm

Length

10.2mm

Standards/Approvals

No

Width

15.93 mm

Automotive Standard

No

The 600V Cool MOS P7 super junction MOSFET continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class RonxA and the inherently low gate charge (QG) of the Cool MOS™ 7th generation platform ensure its high efficiency.

It has rugged body diode

Integrated RG reduces MOSFET oscillation sensitivity

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