Infineon 600V CoolMOS P7 Type N-Channel MOSFET, 18 A, 600 V Enhancement, 3-Pin TO-252 IPD60R180P7ATMA1

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Subtotal (1 pack of 10 units)*

Kr.116 42 

(exc. VAT)

Kr.145 52 

(inc. VAT)

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10 +Kr. 11,642Kr. 116,42

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Packaging Options:
RS Stock No.:
214-4384
Mfr. Part No.:
IPD60R180P7ATMA1
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

18A

Maximum Drain Source Voltage Vds

600V

Package Type

TO-252

Series

600V CoolMOS P7

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

180mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Forward Voltage Vf

0.9V

Typical Gate Charge Qg @ Vgs

25nC

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

72W

Maximum Operating Temperature

150°C

Length

6.65mm

Standards/Approvals

No

Height

2.35mm

Width

6.42 mm

Automotive Standard

No

This Infineon 600V Cool MOS P7 super junction MOSFET continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class RonxA and the inherently low gate charge (QG) of the Cool MOS™ 7th generation platform ensure its high efficiency.

It has rugged body diode

Integrated RG reduces MOSFET oscillation sensitivity

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