Infineon OptiMOS 3 Type N-Channel MOSFET, 21 A, 150 V Enhancement, 3-Pin TO-252 IPD530N15N3GATMA1

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Subtotal (1 pack of 15 units)*

Kr.136 395 

(exc. VAT)

Kr.170 49 

(inc. VAT)

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Per Pack*
15 - 60Kr. 9,093Kr. 136,40
75 - 135Kr. 8,639Kr. 129,59
150 - 360Kr. 8,261Kr. 123,92
375 - 735Kr. 7,913Kr. 118,70
750 +Kr. 7,364Kr. 110,46

*price indicative

Packaging Options:
RS Stock No.:
214-4381
Mfr. Part No.:
IPD530N15N3GATMA1
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

21A

Maximum Drain Source Voltage Vds

150V

Series

OptiMOS 3

Package Type

TO-252

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

53mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

8.7nC

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.2V

Maximum Power Dissipation Pd

68W

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

175°C

Standards/Approvals

No

Height

2.35mm

Length

6.65mm

Width

6.42 mm

Automotive Standard

No

This Infineon OptiMOS 3 MOSFET is ideal for high-frequency switching and synchronous rectification. It is qualified according to JEDEC for target application

It is Halogen-free according to IEC61249-2-21

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