Infineon OptiMOS-T Type N-Channel MOSFET, 70 A, 120 V Enhancement, 3-Pin TO-252

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Subtotal (1 reel of 2500 units)*

Kr.24 602 50 

(exc. VAT)

Kr.30 752 50 

(inc. VAT)

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Units
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Per Reel*
2500 +Kr. 9,841Kr. 24 602,50

*price indicative

RS Stock No.:
214-4389
Mfr. Part No.:
IPD70N12S311ATMA1
Brand:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

70A

Maximum Drain Source Voltage Vds

120V

Package Type

TO-252

Series

OptiMOS-T

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

11.1mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

51nC

Maximum Power Dissipation Pd

125W

Forward Voltage Vf

1.2V

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

175°C

Standards/Approvals

No

Width

6.42 mm

Height

2.35mm

Length

6.65mm

Automotive Standard

AEC-Q101

This Infineon OptiMOS MOSFET is suitable for automotive applications and it is 100% Avalanche tested.

It is Halogen-free according to IEC61249-2-21

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