Infineon OptiMOS T N-Channel MOSFET, 70 A, 100 V, 3-Pin TO-220 IPP70N10S3L12AKSA1

RS Stock No.:: 857-6956
Mfr. Part No.:: IPP70N10S3L12AKSA1
Brand:: Infineon

Infineon OptiMOS T N-Channel MOSFET, 70 A, 100 V, 3-Pin TO-220 IPP70N10S3L12AKSA1

Bulk discount available

Subtotal (1 tube of 500 units)*

Kr.6 150 00

(exc. VAT)

Kr.7 690 00

(inc. VAT)

Stock information currently inaccessible

Units	Per unit	Per Tube*
500 - 2000	Kr. 12,30	Kr. 6 150,00
2500 - 4500	Kr. 11,984	Kr. 5 992,00
5000 +	Kr. 11,685	Kr. 5 842,50

*price indicative

RS Stock No.:: 857-6956
Mfr. Part No.:: IPP70N10S3L12AKSA1
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	N
	Maximum Continuous Drain Current	70 A
	Maximum Drain Source Voltage	100 V
	Package Type	TO-220
	Series	OptiMOS T
	Mounting Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance	15.8 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	2.4V
	Minimum Gate Threshold Voltage	1.2V
	Maximum Power Dissipation	125 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-20 V, +20 V
	Transistor Material	Si
	Number of Elements per Chip	1
	Maximum Operating Temperature	+175 °C
	Typical Gate Charge @ Vgs	60 nC @ 10 V
	Length	10mm
	Width	4.4mm
	Height	15.65mm
	Minimum Operating Temperature	-55 °C

	Select all
	Brand Infineon
	Channel Type N
	Maximum Continuous Drain Current 70 A
	Maximum Drain Source Voltage 100 V
	Package Type TO-220
	Series OptiMOS T
	Mounting Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance 15.8 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 2.4V
	Minimum Gate Threshold Voltage 1.2V
	Maximum Power Dissipation 125 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -20 V, +20 V
	Transistor Material Si
	Number of Elements per Chip 1
	Maximum Operating Temperature +175 °C
	Typical Gate Charge @ Vgs 60 nC @ 10 V
	Length 10mm
	Width 4.4mm
	Height 15.65mm
	Minimum Operating Temperature -55 °C

Infineon OptiMOS™T Power MOSFETs

OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.

N-channel - Enhancement mode
Automotive AEC Q101 qualified
MSL1 up to 260°C peak reflow
175°C operating temperature
Green product (RoHS compliant)

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Infineon OptiMOS T N-Channel MOSFET, 70 A, 100 V, 3-Pin TO-220 IPP70N10S3L12AKSA1

Infineon OptiMOS™T Power MOSFETs

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