Infineon OptiMOS-T Type N-Channel MOSFET, 70 A, 120 V Enhancement, 3-Pin TO-252 IPD70N12S311ATMA1

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Subtotal (1 pack of 10 units)*

Kr.132 89 

(exc. VAT)

Kr.166 11 

(inc. VAT)

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Per Pack*
10 +Kr. 13,289Kr. 132,89

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Packaging Options:
RS Stock No.:
214-4390
Mfr. Part No.:
IPD70N12S311ATMA1
Brand:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

70A

Maximum Drain Source Voltage Vds

120V

Package Type

TO-252

Series

OptiMOS-T

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

11.1mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

125W

Typical Gate Charge Qg @ Vgs

51nC

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.2V

Maximum Operating Temperature

175°C

Length

6.65mm

Standards/Approvals

No

Width

6.42 mm

Height

2.35mm

Automotive Standard

AEC-Q101

This Infineon OptiMOS MOSFET is suitable for automotive applications and it is 100% Avalanche tested.

It is Halogen-free according to IEC61249-2-21

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