Infineon 600V CoolMOS G7 SJ Type N-Channel MOSFET, 23 A, 600 V Enhancement, 8-Pin HSOF

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Subtotal (1 reel of 2000 units)*

Kr.44 178 00 

(exc. VAT)

Kr.55 222 00 

(inc. VAT)

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Units
Per unit
Per Reel*
2000 +Kr. 22,089Kr. 44 178,00

*price indicative

RS Stock No.:
214-4425
Mfr. Part No.:
IPT60R102G7XTMA1
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

23A

Maximum Drain Source Voltage Vds

600V

Series

600V CoolMOS G7 SJ

Package Type

HSOF

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

102mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

34nC

Maximum Power Dissipation Pd

141W

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

0.8V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Standards/Approvals

No

Height

2.4mm

Width

10.58 mm

Length

10.1mm

Automotive Standard

No

This Infineon 600V Cool MOS G7 SJ MOSFET brings together the benefits of the improved 600V Cool MOS™ C7 Gold technology, 4pin Kelvin source capability and the improved thermal properties of the TO-Leadless (TOLL) package to enable a possible SMD solution for high current hard switching topologies such as power factor correction (PFC)

It enables best-in-class R DS(on) in smallest footprint

It has provided production cost reduction

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