Infineon HEXFET Type N-Channel MOSFET, 110 A, 55 V, 3-Pin TO-262 IRF3205ZLPBF

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Subtotal (1 pack of 10 units)*

Kr.192 89 

(exc. VAT)

Kr.241 11 

(inc. VAT)

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Last RS stock
  • Final 5 250 unit(s), ready to ship
Units
Per unit
Per Pack*
10 - 40Kr. 19,289Kr. 192,89
50 - 90Kr. 18,327Kr. 183,27
100 - 240Kr. 17,549Kr. 175,49
250 - 490Kr. 16,782Kr. 167,82
500 +Kr. 15,627Kr. 156,27

*price indicative

Packaging Options:
RS Stock No.:
214-4448
Mfr. Part No.:
IRF3205ZLPBF
Brand:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

110A

Maximum Drain Source Voltage Vds

55V

Package Type

TO-262

Series

HEXFET

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

6.5mΩ

Maximum Power Dissipation Pd

170W

Typical Gate Charge Qg @ Vgs

110nC

Forward Voltage Vf

1.3V

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Standards/Approvals

No

Automotive Standard

No

This HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche

It is lead-free

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