Infineon HEXFET Type N-Channel MOSFET, 110 A, 55 V, 3-Pin TO-262 IRF3205ZLPBF

Subtotal (1 pack of 10 units)*

Kr. 58,08

(exc. VAT)

Kr. 72,60

(inc. VAT)

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10 +Kr. 5,808Kr. 58,08

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Packaging Options:
RS Stock No.:
214-4448
Mfr. Part No.:
IRF3205ZLPBF
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

110A

Maximum Drain Source Voltage Vds

55V

Series

HEXFET

Package Type

TO-262

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

6.5mΩ

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.3V

Typical Gate Charge Qg @ Vgs

110nC

Maximum Power Dissipation Pd

170W

Maximum Operating Temperature

175°C

Standards/Approvals

No

Automotive Standard

No

This HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche

It is lead-free

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