Infineon HEXFET Type N-Channel MOSFET, 51 A, 55 V, 3-Pin TO-263 IRFZ46ZSTRLPBF

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Subtotal (1 pack of 15 units)*

Kr.193 425 

(exc. VAT)

Kr.241 785 

(inc. VAT)

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  • 1 185 unit(s) ready to ship
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Units
Per unit
Per Pack*
15 - 60Kr. 12,895Kr. 193,43
75 - 135Kr. 12,263Kr. 183,95
150 - 360Kr. 11,993Kr. 179,90
375 - 735Kr. 11,232Kr. 168,48
750 +Kr. 10,445Kr. 156,68

*price indicative

Packaging Options:
RS Stock No.:
214-4464
Mfr. Part No.:
IRFZ46ZSTRLPBF
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

51A

Maximum Drain Source Voltage Vds

55V

Package Type

TO-263

Series

HEXFET

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

13.6mΩ

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.3V

Typical Gate Charge Qg @ Vgs

46nC

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

82W

Maximum Operating Temperature

175°C

Standards/Approvals

No

Automotive Standard

No

This Infineon Strong IRFET power MOSFET is optimized for low RDS(on) and high current capability. It is ideal for low frequency applications requiring performance and ruggedness.

It is optimized for synchronous rectification

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