Infineon HEXFET Type N-Channel MOSFET, 51 A, 55 V Enhancement, 3-Pin TO-220 IRFZ44ZPBF
- RS Stock No.:
- 145-9601
- Mfr. Part No.:
- IRFZ44ZPBF
- Brand:
- Infineon
Bulk discount available
Subtotal (1 tube of 50 units)*
Kr.437 80
(exc. VAT)
Kr.547 25
(inc. VAT)
FREE delivery for online orders over 500,00 kr
In Stock
- Plus 100 unit(s) shipping from 19. januar 2026
- Plus 2 150 unit(s) shipping from 26. januar 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 50 - 50 | Kr. 8,756 | Kr. 437,80 |
| 100 - 200 | Kr. 6,917 | Kr. 345,85 |
| 250 - 450 | Kr. 6,656 | Kr. 332,80 |
| 500 - 1200 | Kr. 6,303 | Kr. 315,15 |
| 1250 + | Kr. 6,043 | Kr. 302,15 |
*price indicative
- RS Stock No.:
- 145-9601
- Mfr. Part No.:
- IRFZ44ZPBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 51A | |
| Maximum Drain Source Voltage Vds | 55V | |
| Series | HEXFET | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 14mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 29nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 80W | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 175°C | |
| Height | 8.77mm | |
| Length | 10mm | |
| Width | 4.4 mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 51A | ||
Maximum Drain Source Voltage Vds 55V | ||
Series HEXFET | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 14mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 29nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 80W | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 175°C | ||
Height 8.77mm | ||
Length 10mm | ||
Width 4.4 mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
- COO (Country of Origin):
- MX
N-Channel Power MOSFET 55V, Infineon
Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Related links
- Infineon HEXFET Type N-Channel MOSFET 55 V Enhancement, 3-Pin TO-220
- Infineon HEXFET Type N-Channel Power MOSFET 55 V Enhancement, 3-Pin TO-220AB
- Infineon HEXFET Type N-Channel Power MOSFET 55 V Enhancement, 3-Pin TO-220AB IRLZ44ZPBF
- Infineon HEXFET Type N-Channel MOSFET 55 V, 3-Pin TO-263
- Infineon HEXFET Type N-Channel MOSFET 55 V, 3-Pin TO-263 IRFZ46ZSTRLPBF
- Infineon HEXFET Type N-Channel MOSFET 150 V Enhancement, 3-Pin TO-220
- Infineon HEXFET Type N-Channel MOSFET 150 V Enhancement, 3-Pin TO-220 IRFB52N15DPBF
- Infineon HEXFET N-Channel MOSFET 55 V D²Pak IRLZ44ZSTRLPBF
