Infineon HEXFET Type N-Channel MOSFET, 51 A, 150 V Enhancement, 3-Pin TO-220

Subtotal (1 tube of 1000 units)*

Kr. 13 193,00

(exc. VAT)

Kr. 16 491,00

(inc. VAT)

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  • Shipping from 07 December 2026
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Units
Per unit
Per Tube*
1000 +Kr. 13,193Kr. 13 193,00

*price indicative

RS Stock No.:
262-6747
Mfr. Part No.:
IRFB52N15DPBF
Brand:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

51A

Maximum Drain Source Voltage Vds

150V

Series

HEXFET

Package Type

TO-220

Mount Type

Through Hole

Pin Count

3

Channel Mode

Enhancement

Forward Voltage Vf

1.3V

Standards/Approvals

No

Automotive Standard

No

The Infineon power MOSFET has low gate to drain charge to reduce switching losses. It is suitable for use with high frequency DC-DC converters and plasma display panel.

Fully characterized avalanche voltage and current

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