Infineon SIPMOS N-Channel MOSFET, 200 mA, 60 V Enhancement, 3-Pin SOT-23 SN7002NH6327XTSA2

RS Stock No.:: 214-4476
Distrelec Article No.:: 304-39-427
Mfr. Part No.:: SN7002NH6327XTSA2
Brand:: Infineon

Infineon SIPMOS N-Channel MOSFET, 200 mA, 60 V Enhancement, 3-Pin SOT-23 SN7002NH6327XTSA2

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Subtotal (1 pack of 200 units)*

Kr. 258,00

(exc. VAT)

Kr. 322,00

(inc. VAT)

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Units	Per unit	Per Pack*
200 - 200	Kr. 1,29	Kr. 258,00
400 - 800	Kr. 1,226	Kr. 245,20
1000 - 1800	Kr. 1,174	Kr. 234,80
2000 - 4800	Kr. 1,123	Kr. 224,60
5000 +	Kr. 1,046	Kr. 209,20

*price indicative

RS Stock No.:: 214-4476
Distrelec Article No.:: 304-39-427
Mfr. Part No.:: SN7002NH6327XTSA2
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	200mA
	Maximum Drain Source Voltage Vds	60V
	Series	SIPMOS
	Package Type	SOT-23
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	5Ω
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	1.5nC
	Forward Voltage Vf	1.2V
	Maximum Gate Source Voltage Vgs	60V
	Maximum Power Dissipation Pd	0.36W
	Maximum Operating Temperature	150°C
	Standards/Approvals	IEC61249-2-21, AEC Q101
	Automotive Standard	No

	Select all
	Brand Infineon
	Channel Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 200mA
	Maximum Drain Source Voltage Vds 60V
	Series SIPMOS
	Package Type SOT-23
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 5Ω
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 1.5nC
	Forward Voltage Vf 1.2V
	Maximum Gate Source Voltage Vgs 60V
	Maximum Power Dissipation Pd 0.36W
	Maximum Operating Temperature 150°C
	Standards/Approvals IEC61249-2-21, AEC Q101
	Automotive Standard No

Datasheet - SN7002NH6327XTSA2

Infineon SIPMOS Series MOSFET, 60V Drain Source Voltage, 5Ω Drain Source Resistance - SN7002NH6327XTSA2

This MOSFET is a small-signal N-channel transistor designed for switching and control tasks in surface-mount assemblies. It operates as an enhancement-mode device and is built to withstand a wide ambient range, making it suitable for electronics that require compact, thermally resilient switching components.

Features and Benefits:

• 60V drain voltage for high-voltage switching capability
• 5Ω Rds(on) enabling controlled low-current conduction
• 200mA continuous drain current for small-signal loads
• 1.2V forward voltage supporting predictable diode drop
• 1.5nC typical gate charge for faster gate transitions
• 0.36W power dissipation for moderate thermal loading

Applications

• Suitable for battery-management signal switching circuits
• Ideal for low-current power routing in consumer electronics
• Used with small motor-driver interface circuits
• Can be used for level-shifting and signal multiplexing
• Suitable for sensor-conditioning and signal isolation tasks

What package and mounting type does it use for PCB assembly?

It is supplied in a SOT-23 package and intended for surface-mount placement.

How does it perform across temperature extremes in harsh environments?

It operates between -55°C and 150°C, providing stability for varied thermal conditions.

What gate and drain voltage limits must be observed during design?

The gate-to-source and drain-to-source voltages are both limited to 60V, which defines maximum applied voltages.

Are there industry material or process standards associated with the component?

It complies with IEC 61249-2-21 and meets AEC Q101 for automotive-qualification equivalence.