Infineon CoolMOS P7 N-Channel MOSFET, 4 A, 700 V Enhancement, 3-Pin TO-252 IPD70R1K4P7SAUMA1

RS Stock No.:: 214-9046
Mfr. Part No.:: IPD70R1K4P7SAUMA1
Brand:: Infineon

Infineon CoolMOS P7 N-Channel MOSFET, 4 A, 700 V Enhancement, 3-Pin TO-252 IPD70R1K4P7SAUMA1

Subtotal (2500 units, on reels of 2500)*

Kr. 4 365,00

(exc. VAT)

Kr. 5 455,00

(inc. VAT)

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In Stock

Plus 10 000 unit(s) shipping from 28 September 2026

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Units	Per unit	Per Reel*
2500 +	Kr. 1,746	Kr. 4 365,00

*price indicative

RS Stock No.:: 214-9046
Mfr. Part No.:: IPD70R1K4P7SAUMA1
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	4A
	Maximum Drain Source Voltage Vds	700V
	Package Type	TO-252
	Series	CoolMOS P7
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	1.4Ω
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	4.7nC
	Maximum Gate Source Voltage Vgs	16V
	Maximum Power Dissipation Pd	22.7W
	Forward Voltage Vf	0.9V
	Minimum Operating Temperature	-40°C
	Maximum Operating Temperature	150°C
	Width	6.22mm
	Standards/Approvals	No
	Height	2.41mm
	Length	6.73mm
	Automotive Standard	No

	Select all
	Brand Infineon
	Channel Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 4A
	Maximum Drain Source Voltage Vds 700V
	Package Type TO-252
	Series CoolMOS P7
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 1.4Ω
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 4.7nC
	Maximum Gate Source Voltage Vgs 16V
	Maximum Power Dissipation Pd 22.7W
	Forward Voltage Vf 0.9V
	Minimum Operating Temperature -40°C
	Maximum Operating Temperature 150°C
	Width 6.22mm
	Standards/Approvals No
	Height 2.41mm
	Length 6.73mm
	Automotive Standard No

Datasheet - IPD70R1K4P7SAUMA1

Infineon CoolMOS P7 Series MOSFET, 700V Maximum Drain Source Voltage, 4A Maximum Continuous Drain Current - IPD70R1K4P7SAUMA1

This MOSFET is a high-voltage switching device designed for power conversion and drive applications. It operates across a wide temperature range and provides N-channel enhancement-mode switching capability suitable for surface-mounted assemblies in demanding electrical systems.

Features and Benefits:

• 700 V drain rating enables high-voltage switching applications
• 4 A continuous drain current supports moderate load currents
• 1.4 Ω low RDS(on) reduces conduction losses under load
• 22.7 W power dissipation allows sustained thermal handling
• 4.7 nC typical gate charge enables efficient switching control
• 16 V gate rating permits substantial gate-drive headroom

Applications

• Suitable for SMPS primary switch stages
• Ideal for motor-drive half-bridge switches
• Used with high-voltage industrial power supplies
• Can be used for switch-mode power regulation
• Appropriate for surface-mount power assemblies

What thermal range is acceptable for operation?

It is specified to function from −40 °C up to 150 °C.

What package style and mounting method does it use?

It is supplied in a TO-252 package and intended for surface mounting.

How many pins are available for PCB connection?

There are three electrical pins for standard MOSFET connection.

What is the typical forward voltage when conducting?

The forward voltage under specified conditions is 0.9 V.

What channel characteristics affect device behaviour?

It is an N-channel, enhancement-mode device with specified gate and drain limits.