Infineon CoolMOS CFD7 Type N-Channel MOSFET, 25 A, 600 V Enhancement, 3-Pin TO-220 IPP60R090CFD7XKSA1

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Subtotal (1 pack of 5 units)*

Kr.266 54 

(exc. VAT)

Kr.333 175 

(inc. VAT)

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Units
Per unit
Per Pack*
5 - 5Kr. 53,308Kr. 266,54
10 - 20Kr. 47,454Kr. 237,27
25 - 45Kr. 44,25Kr. 221,25
50 - 120Kr. 41,024Kr. 205,12
125 +Kr. 37,844Kr. 189,22

*price indicative

Packaging Options:
RS Stock No.:
214-9091
Mfr. Part No.:
IPP60R090CFD7XKSA1
Brand:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

25A

Maximum Drain Source Voltage Vds

600V

Package Type

TO-220

Series

CoolMOS CFD7

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

90mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

125W

Forward Voltage Vf

1V

Typical Gate Charge Qg @ Vgs

51nC

Length

10.36mm

Height

9.45mm

Width

4.57 mm

Standards/Approvals

No

Automotive Standard

No

The Infineon CoolMOS Series is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction (SJ) principle and pioneered by Infineon Technologies. The latest CoolMOS CFD7 is the successor to the CoolMOS CFD2 series and is an optimized platform tailored to target soft switching applications such as phase-shift full-bridge (ZVS) and LLC. The CoolMOS CFD7 technology meets highest efficiency and reliability standards and furthermore supports high power density solutions. Altogether, CoolMOS CFD7 makes resonant switching topologies more efficient, more reliable, lighter and cooler.

Ultra-fast body diode

Low gate charge

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