Infineon CoolMOS CFD7 Type N-Channel MOSFET, 18 A, 600 V Enhancement, 3-Pin TO-247

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Subtotal (1 tube of 30 units)*

Kr.986 67 

(exc. VAT)

Kr.1 233 33 

(inc. VAT)

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  • 180 unit(s) ready to ship
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Units
Per unit
Per Tube*
30 - 30Kr. 32,889Kr. 986,67
60 - 120Kr. 31,244Kr. 937,32
150 +Kr. 29,929Kr. 897,87

*price indicative

RS Stock No.:
214-9114
Mfr. Part No.:
IPW60R125CFD7XKSA1
Brand:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

18A

Maximum Drain Source Voltage Vds

600V

Series

CoolMOS CFD7

Package Type

TO-247

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

125mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

92W

Forward Voltage Vf

1V

Typical Gate Charge Qg @ Vgs

36nC

Height

21.1mm

Standards/Approvals

No

Width

5.21 mm

Length

16.13mm

Automotive Standard

No

The Infineon CoolMOS Series is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction (SJ) principle and pioneered by Infineon Technologies. The latest CoolMOS CFD7 is the successor to the CoolMOS CFD2 series and is an optimized platform tailored to target soft switching applications such as phase-shift full-bridge (ZVS) and LLC. The CoolMOS CFD7 technology meets highest efficiency and reliability standards and furthermore supports high power density solutions. Altogether, CoolMOS CFD7 makes resonant switching topologies more efficient, more reliable, lighter and cooler.

Ultra-fast body diode

Low gate charge

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