Infineon CoolMOS CFD7 Type N-Channel MOSFET, 18 A, 600 V Enhancement, 3-Pin TO-247 IPW60R125CFD7XKSA1

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Subtotal (1 pack of 5 units)*

Kr.274 78 

(exc. VAT)

Kr.343 475 

(inc. VAT)

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Units
Per unit
Per Pack*
5 - 5Kr. 54,956Kr. 274,78
10 - 20Kr. 46,148Kr. 230,74
25 - 45Kr. 43,404Kr. 217,02
50 - 120Kr. 40,108Kr. 200,54
125 +Kr. 37,386Kr. 186,93

*price indicative

Packaging Options:
RS Stock No.:
214-9115
Mfr. Part No.:
IPW60R125CFD7XKSA1
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

18A

Maximum Drain Source Voltage Vds

600V

Series

CoolMOS CFD7

Package Type

TO-247

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

125mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

92W

Typical Gate Charge Qg @ Vgs

36nC

Forward Voltage Vf

1V

Maximum Gate Source Voltage Vgs

20 V

Height

21.1mm

Length

16.13mm

Standards/Approvals

No

Width

5.21 mm

Automotive Standard

No

The Infineon CoolMOS Series is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction (SJ) principle and pioneered by Infineon Technologies. The latest CoolMOS CFD7 is the successor to the CoolMOS CFD2 series and is an optimized platform tailored to target soft switching applications such as phase-shift full-bridge (ZVS) and LLC. The CoolMOS CFD7 technology meets highest efficiency and reliability standards and furthermore supports high power density solutions. Altogether, CoolMOS CFD7 makes resonant switching topologies more efficient, more reliable, lighter and cooler.

Ultra-fast body diode

Low gate charge

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