Infineon CoolMOS CE Type N-Channel MOSFET, 8.7 A, 700 V Enhancement, 3-Pin TO-251 IPSA70R950CEAKMA1

Bulk discount available

Subtotal (1 pack of 25 units)*

Kr.164 725 

(exc. VAT)

Kr.205 90 

(inc. VAT)

Add to Basket
Select or type quantity
Stock information currently inaccessible
Units
Per unit
Per Pack*
25 - 100Kr. 6,589Kr. 164,73
125 - 225Kr. 5,07Kr. 126,75
250 - 600Kr. 4,741Kr. 118,53
625 - 1225Kr. 4,416Kr. 110,40
1250 +Kr. 4,086Kr. 102,15

*price indicative

Packaging Options:
RS Stock No.:
214-9112
Mfr. Part No.:
IPSA70R950CEAKMA1
Brand:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

8.7A

Maximum Drain Source Voltage Vds

700V

Series

CoolMOS CE

Package Type

TO-251

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

950mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

15.3nC

Minimum Operating Temperature

-40°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

94W

Forward Voltage Vf

0.9V

Maximum Operating Temperature

150°C

Length

6.6mm

Standards/Approvals

No

Width

2.38 mm

Height

6.1mm

Automotive Standard

No

The Infineon CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction (SJ) principle and pioneered by Infineon Technologies. CoolMOS CE is a price-performance optimized platform enabling to target cost sensitive applications in Consumer and Lighting markets by still meeting highest efficiency standards. The new series provides all benefits of a fast switching Super junction MOSFET while not sacrificing ease of use and offering the best cost down performance ratio available on the market.

Easy to use/drive

Very high commutation ruggedness

Qualified for standard grade applications

Related links