Infineon StrongIRFET Type N-Channel MOSFET, 360 A, 40 V Enhancement, 7-Pin TO-263 IRF40SC240ARMA1
- RS Stock No.:
- 214-9123
- Mfr. Part No.:
- IRF40SC240ARMA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 5 units)*
Kr.246 74
(exc. VAT)
Kr.308 425
(inc. VAT)
FREE delivery for online orders over 500,00 kr
In Stock
- 2 990 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 20 | Kr. 49,348 | Kr. 246,74 |
| 25 - 45 | Kr. 41,94 | Kr. 209,70 |
| 50 - 120 | Kr. 39,01 | Kr. 195,05 |
| 125 - 245 | Kr. 36,494 | Kr. 182,47 |
| 250 + | Kr. 33,564 | Kr. 167,82 |
*price indicative
- RS Stock No.:
- 214-9123
- Mfr. Part No.:
- IRF40SC240ARMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 360A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | TO-263 | |
| Series | StrongIRFET | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 0.65mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 417W | |
| Typical Gate Charge Qg @ Vgs | 366nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Height | 4.4mm | |
| Length | 10.2mm | |
| Width | 9.45 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 360A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type TO-263 | ||
Series StrongIRFET | ||
Mount Type Surface | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 0.65mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 417W | ||
Typical Gate Charge Qg @ Vgs 366nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Height 4.4mm | ||
Length 10.2mm | ||
Width 9.45 mm | ||
Automotive Standard No | ||
The Infineons latest 40 V Strong IRFET power MOSFET devices are optimized for both high current and low RDS(on) making them the ideal solution for high current battery powered applications. It offers design flexibility, with Industry standard packaging. It is capable of providing immunity to false turn-on in noisy environments.
It has 175°C operating temperature
High current carrying capability
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