Infineon 700V CoolMOS P7 Type N-Channel MOSFET, 12.5 A, 700 V Enhancement, 3-Pin SOT-223 IPN70R360P7SATMA1

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Subtotal (1 pack of 20 units)*

Kr.160 62 

(exc. VAT)

Kr.200 78 

(inc. VAT)

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Per Pack*
20 - 80Kr. 8,031Kr. 160,62
100 - 180Kr. 7,631Kr. 152,62
200 - 480Kr. 7,31Kr. 146,20
500 - 980Kr. 6,99Kr. 139,80
1000 +Kr. 6,504Kr. 130,08

*price indicative

Packaging Options:
RS Stock No.:
215-2526
Mfr. Part No.:
IPN70R360P7SATMA1
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

12.5A

Maximum Drain Source Voltage Vds

700V

Series

700V CoolMOS P7

Package Type

SOT-223

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

360mΩ

Channel Mode

Enhancement

Forward Voltage Vf

0.9V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

16.4nC

Maximum Power Dissipation Pd

7.2W

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

150°C

Standards/Approvals

No

Automotive Standard

No

The Infineon 700V Cool MOS™ P7 super junction MOSFET series addresses the low power SMPS market, such as mobile phone chargers or notebook adapters by offering fundamental performance gains compared to super junction technologies used today. The technology meets highest efficiency standards and supports high power density, enabling customers going towards very slim designs. The latest CoolMOS™P7 is an optimized platform tailored to target cost sensitive applications in consumer markets such as charger, adapter, lighting, TV, etc.

Extremely low losses due to very low FOMRDS(on)*Qg and RDS(on)*Eoss

Excellent thermal behaviour

Integrated ESD protection diode

Low switching losses (Eoss)

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