Infineon Dual HEXFET 1 Type N-Channel MOSFET, 6.6 A, 20 V Enhancement, 8-Pin SO-8 IRF7311TRPBF

RS Stock No.:: 215-2583
Distrelec Article No.:: 304-39-415
Mfr. Part No.:: IRF7311TRPBF
Brand:: Infineon

Infineon Dual HEXFET 1 Type N-Channel MOSFET, 6.6 A, 20 V Enhancement, 8-Pin SO-8 IRF7311TRPBF

Bulk discount available

Subtotal (1 pack of 20 units)*

Kr.208 80

(exc. VAT)

Kr.261 00

(inc. VAT)

FREE delivery for online orders over 500,00 kr

Temporarily out of stock

Shipping from 25. januar 2027

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit	Per Pack*
20 - 80	Kr. 10,44	Kr. 208,80
100 - 180	Kr. 9,924	Kr. 198,48
200 - 480	Kr. 9,507	Kr. 190,14
500 - 980	Kr. 9,089	Kr. 181,78
1000 +	Kr. 8,46	Kr. 169,20

*price indicative

RS Stock No.:: 215-2583
Distrelec Article No.:: 304-39-415
Mfr. Part No.:: IRF7311TRPBF
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	6.6A
	Maximum Drain Source Voltage Vds	20V
	Series	HEXFET
	Package Type	SO-8
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	29mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	12 V
	Typical Gate Charge Qg @ Vgs	18nC
	Maximum Power Dissipation Pd	2W
	Forward Voltage Vf	0.72V
	Transistor Configuration	Dual
	Maximum Operating Temperature	150°C
	Standards/Approvals	No
	Length	5mm
	Height	1.5mm
	Width	4 mm
	Number of Elements per Chip	1
	Automotive Standard	No

	Select all
	Brand Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 6.6A
	Maximum Drain Source Voltage Vds 20V
	Series HEXFET
	Package Type SO-8
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 29mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 12 V
	Typical Gate Charge Qg @ Vgs 18nC
	Maximum Power Dissipation Pd 2W
	Forward Voltage Vf 0.72V
	Transistor Configuration Dual
	Maximum Operating Temperature 150°C
	Standards/Approvals No
	Length 5mm
	Height 1.5mm
	Width 4 mm
	Number of Elements per Chip 1
	Automotive Standard No

Datasheet - IRF7311TRPBF

The Infineon series fifth generation HEXFET from International rectifier utilize advanced processing techniques to achieve extremely low on resistance for Silicon area. This benefits, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFET are well known for, providing sufficient level device for, provides designer with an extremely efficient and reliable device for use in a wide variety of applications. The SO-8 has been modified through a customized lead frame for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With this improvement multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapour phase, infrared for Wave soldering techniques.

Generation V technology

Ultra low on resistance

Surface mount

Fully avalanche rated

Dual N-channel MOSFET

Infineon Dual HEXFET 1 Type N-Channel MOSFET, 6.6 A, 20 V Enhancement, 8-Pin SO-8 IRF7311TRPBF

FREE delivery for online orders over 500,00 kr

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