Infineon Dual HEXFET 1 Type N-Channel Power MOSFET, 10 A, 20 V Enhancement, 8-Pin SO-8

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Subtotal (1 reel of 4000 units)*

Kr.16 460 00 

(exc. VAT)

Kr.20 576 00 

(inc. VAT)

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Units
Per unit
Per Reel*
4000 +Kr. 4,115Kr. 16 460,00

*price indicative

RS Stock No.:
215-2589
Mfr. Part No.:
IRF8910TRPBF
Brand:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

Power MOSFET

Maximum Continuous Drain Current Id

10A

Maximum Drain Source Voltage Vds

20V

Package Type

SO-8

Series

HEXFET

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

13.4mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

2W

Typical Gate Charge Qg @ Vgs

7.4nC

Forward Voltage Vf

1V

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Transistor Configuration

Dual

Maximum Operating Temperature

150°C

Height

1.5mm

Standards/Approvals

No

Width

4 mm

Length

5mm

Number of Elements per Chip

1

Automotive Standard

No

The Infineon HEXFET Power MOSFET has 20V maximum drain source voltage in a SO-8 package. It has application as dual SO-8 MOSFET for POL converters in desktop, servers, graphics cards, game consoles and set-top box.

Lead-Free

Low RDS(on)

Ultra-Low Gate Impedance

Dual N-Channel MOSFET

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