Taiwan Semiconductor TSM025 Type N-Channel MOSFET, 644 A, 40 V Enhancement, 8-Pin PDFN56 TSM025NB04CR
- RS Stock No.:
- 216-9648
- Mfr. Part No.:
- TSM025NB04CR
- Brand:
- Taiwan Semiconductor
Bulk discount available
Subtotal (1 pack of 10 units)*
Kr.353 72
(exc. VAT)
Kr.442 15
(inc. VAT)
FREE delivery for online orders over 500,00 kr
Last RS stock
- Final 1 660 unit(s), ready to ship
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 40 | Kr. 35,372 | Kr. 353,72 |
| 50 - 90 | Kr. 34,675 | Kr. 346,75 |
| 100 - 240 | Kr. 31,803 | Kr. 318,03 |
| 250 - 990 | Kr. 31,163 | Kr. 311,63 |
| 1000 + | Kr. 28,897 | Kr. 288,97 |
*price indicative
- RS Stock No.:
- 216-9648
- Mfr. Part No.:
- TSM025NB04CR
- Brand:
- Taiwan Semiconductor
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Taiwan Semiconductor | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 644A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | TSM025 | |
| Package Type | PDFN56 | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 2.5mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 107W | |
| Typical Gate Charge Qg @ Vgs | 77nC | |
| Forward Voltage Vf | 1V | |
| Maximum Operating Temperature | 150°C | |
| Height | 1.1mm | |
| Standards/Approvals | IEC 61249-2-21, RoHS 2011/65/EU, WEEE 2002/96/EC | |
| Length | 6mm | |
| Width | 3.81 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Taiwan Semiconductor | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 644A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series TSM025 | ||
Package Type PDFN56 | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 2.5mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 107W | ||
Typical Gate Charge Qg @ Vgs 77nC | ||
Forward Voltage Vf 1V | ||
Maximum Operating Temperature 150°C | ||
Height 1.1mm | ||
Standards/Approvals IEC 61249-2-21, RoHS 2011/65/EU, WEEE 2002/96/EC | ||
Length 6mm | ||
Width 3.81 mm | ||
Automotive Standard No | ||
The Taiwan semiconductor single N channel power MOSFET transistors, stands for ’Metal Oxide Semiconductor Field-Effect Transistors’. MOSFETs are transistor devices which are controlled by a capacitor. The "Field-Effect" means that they are controlled by voltage. The aim of a MOSFET is to control the flow of the current passing through from the source to the drain terminals.
Low RDS(ON) to minimize conductive losses Low gate charge for fast power switching 100% UIS and Rg tested
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